I would like to introduce Zach Stum, the Wide Band Gap device engineer who is leading the “Next Generation SiC MOSFET” development program here at GRC. Zach and his team are working on improving key device performance parameters in order to reduce the MOSFET’s on-state resistance (at both room temperature and higher temps). Zach and team are enabling our SiC MOSFET devices to meet a wide range of GE business needs.
Hi everyone! Today, I wanted to share with you one of the main technologies we’re developing in the GE Global Research cleanroom: Silicon Carbide (SiC) power semiconductor devices. We take single-crystal SiC wafers and turn them into advanced power electronic devices, basically tiny switches that turn on and off very efficiently and very quickly. These state-of-the-art devices are fabricated through hundreds of carefully-controlled processing steps, thanks to a great team of experts and a suite of semiconductor processing equipment.
GE has invested in SiC power devices as a game-changing technology across multiple GE businesses – Aviation, Healthcare, and Energy in particular. SiC-based devices can operate at higher efficiency, higher temperature, and higher frequencies than traditional Silicon-based technology. This leads to big energy savings, as well as reducing the size and weight of many systems. The latter is a big advantage in Aviation applications in particular, where space and weight are at a premium.
The Silicon Carbide team at the GE Research Center has kept pushing ourselves to further improve the performance, reliability, and manufacturability of SiC MOSFETs, thyristors, diodes, and other devices. At the same time we keep finding more GE products that will benefit from the great capabilities of these devices. Silicon Carbide is the future of power electronics, and GE is leading the way! Check out the video below for a bit more insight into the technology and a look into the Global Research cleanroom!